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* -2.4A, -200V, RDS(on) = 2.7Ω @VGS = -10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche t.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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